Title of article
Influence of series resistance and cooling conditions on I–V characteristics of SiC merged PiN Schottky diodes
Author/Authors
Hapka، نويسنده , , Aneta and Janke، نويسنده , , Wlodzimierz and Krasniewski، نويسنده , , Jaroslaw، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
1310
To page
1313
Abstract
The paper presents the exemplary electro-thermal models of merged PiN Schottky diode – a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I–V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.
Keywords
silicon carbide , Thermal Resistance , Parasitic series resistance , Merged PiN Schottky
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2012
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2150533
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