Title of article
Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition
Author/Authors
Luka، نويسنده , , G. and Witkowski، نويسنده , , B.S. and Wachnicki، نويسنده , , L. and Jakiela، نويسنده , , R. and Virt، نويسنده , , I.S. and Andrzejczuk، نويسنده , , M. and Lewandowska، نويسنده , , M. and Godlewski، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
6
From page
15
To page
20
Abstract
Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10−3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes.
Keywords
atomic layer deposition , Flexible electronics , Zinc oxide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2014
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2151103
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