Title of article
Recent developments and applications in electroabsorption semiconductor modulators
Author/Authors
Cunningham، نويسنده , , J.E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
40
From page
155
To page
194
Abstract
State of the art developments in electroabsorption modulators that utilize quantum well-semiconductors are reviewed. Special emphasis is given to recent progress made in materials for modulators. On technological grounds, optimized Multiple Quantum Well modulators in the GaAs/AlGaAs system have been driven by applications in photonic switching and optical interconnects. Surprisingly, these same structures exhibit a wealth of new behavior that ranges from Bloch oscillations to excitons in Coupled Well, Wannier–Stark and Shallow Well superlattices. Several types of excitonic phases have been identified, optically and found to transform as the system dimensionality changes from 2D to 3D. In addition, new material systems have shown that quantum well excitonic absorption quality can be transferred to technologically important wavelengths at 1.06 or 1.55 μm.
Journal title
Materials Science and Engineering R Reports
Serial Year
1999
Journal title
Materials Science and Engineering R Reports
Record number
2152384
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