• Title of article

    Recent developments and applications in electroabsorption semiconductor modulators

  • Author/Authors

    Cunningham، نويسنده , , J.E.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    40
  • From page
    155
  • To page
    194
  • Abstract
    State of the art developments in electroabsorption modulators that utilize quantum well-semiconductors are reviewed. Special emphasis is given to recent progress made in materials for modulators. On technological grounds, optimized Multiple Quantum Well modulators in the GaAs/AlGaAs system have been driven by applications in photonic switching and optical interconnects. Surprisingly, these same structures exhibit a wealth of new behavior that ranges from Bloch oscillations to excitons in Coupled Well, Wannier–Stark and Shallow Well superlattices. Several types of excitonic phases have been identified, optically and found to transform as the system dimensionality changes from 2D to 3D. In addition, new material systems have shown that quantum well excitonic absorption quality can be transferred to technologically important wavelengths at 1.06 or 1.55 μm.
  • Journal title
    Materials Science and Engineering R Reports
  • Serial Year
    1999
  • Journal title
    Materials Science and Engineering R Reports
  • Record number

    2152384