Effect of hydrogen implantation on semiconductor–metal transition and high-pressure thermopower in Si

In the present work Czochralski-grown silicon single crystals were investigated implanted with different doses of H+ ions. The Si wafers were characterized by the Raman scattering technique. Thermoelectric power was studied in a pressure range of 0–20 GPa of p-type Si single crystal wafers containing a thin hydrogenated layer consisting of amorphous Si, nanocrystalline Si and H-rich Si layers. In the region of the pressure-induced phase transition from the initial semiconductor diamond-like into the metal β-Sn lattice, a lowering of thermopower values was noticed in comparison with ones of p-Si.