Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications

Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4–8) × 10−6 K−1 and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management. /SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved by• ur deposited molybdenum coating on SiC powders to control interface reactions, atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites.