• Title of article

    Thermal instability of molybdenum and silicon tips

  • Author/Authors

    Yu، نويسنده , , Z.X. and Deng، نويسنده , , Sz-Shyan Wu، نويسنده , , S.S. and Zheng، نويسنده , , X.G. and Chen، نويسنده , , J and Xu، نويسنده , , N.S، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    125
  • To page
    129
  • Abstract
    Thermal effects in molybdenum and silicon tips are analyzed with the aim of understanding the initiating mechanism of thermal instability leading to vacuum breakdown. A new theoretical treatment is employed to study the thermal response of tip emitters, which takes into account the correlative effect between field emission and its resultant temperature rise at the apex of tips. The results show that for a typical Si tip, thermal instability would occur before the tip temperature reaches its melting point, while thermal effect is not significant in the case of the Mo tip with the same geometry and dimension of a silicon tip. This remarkable difference between two types of tip is mainly due to their large discrepancies in electrical resistivity, but the Nottingham effect contributes significantly as well.
  • Keywords
    Thermal instability , Field emission , TIPS
  • Journal title
    Ultramicroscopy
  • Serial Year
    1999
  • Journal title
    Ultramicroscopy
  • Record number

    2155239