Title of article
Influence of oxygen partial pressure on the wetting of SiC by a Co–Si alloy
Author/Authors
Mailliart، نويسنده , , O. and Hodaj، نويسنده , , F. and Chaumat، نويسنده , , V. and Eustathopoulos، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
7
From page
174
To page
180
Abstract
In this investigation the influence of oxygen partial pressure P O 2 on the wetting of SiC by a Co–Si alloy was studied. Wetting experiments were carried out in argon with different oxygen contents (from 5 to 1000 ppm). The relationship between wetting and deoxidation of surfaces (SiC and Co–Si alloy) was investigated. Calculations were performed to evaluate the temperature range over which deoxidation is possible. These calculations are in agreement with the experimental results.
Keywords
Oxidation , silicon carbide , Interfaces , Wetting , Silicides
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2158009
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