Analysis of EEL spectrum of low-loss region using the Cs-corrected STEM–EELS method and multivariate analysis

We analyzed a Si/SiO2 interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy–electron energy loss spectroscopy which is characterized by using the electron energy loss spectrum of the low-loss region. We extracted the low-loss spectra of Si, SiO2 and an interface state. Even if the interface is formed from materials with different dielectric functions, the present method will prove suitable for obtaining a more quantitative understanding of the dielectric characteristic.