Title of article
Photoelectron spectromicroscopy at chalcopyrite films
Author/Authors
Pettenkofer، نويسنده , , C. and Hofmann، نويسنده , , A. and Bremsteller، نويسنده , , Kathryn W. and Lehmann، نويسنده , , C. and Kelleter، نويسنده , , F.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2012
Pages
4
From page
102
To page
105
Abstract
CuInSe2 films were prepared by MBE on GaAs (1 1 1) substrates. ZnSe and ZnO are subsequently deposited in situ by MOMBE. Interface parameters like band offsets and morphology are studied by X-ray photoelectron spectroscopy (XPS) and Low energy electron diffraction (LEED). Spectroscopic XPEEM (X-ray photoelectron emission microscopy) at the U49/2 PGM2 beamline at BESSY was used to investigate the lateral homogenity of the interface. After annealing in situ a lateral inhomogenious In diffusion is observed into the ZnSe/ZnO interface.
Keywords
Photoelectron microscopy , Chalcopyrite , solar cells
Journal title
Ultramicroscopy
Serial Year
2012
Journal title
Ultramicroscopy
Record number
2158620
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