• Title of article

    Analysis of implanted silicon dopant profiles

  • Author/Authors

    Prosa، نويسنده , , T.J. and Olson، نويسنده , , D. and Geiser، نويسنده , , B. and Larson، نويسنده , , D.J. and Henry، نويسنده , , K. and Steel، نويسنده , , E.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2013
  • Pages
    7
  • From page
    179
  • To page
    185
  • Abstract
    Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (arsenic implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip profile reconstruction was utilized where measurements of tip profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.
  • Keywords
    Atom probe tomography
  • Journal title
    Ultramicroscopy
  • Serial Year
    2013
  • Journal title
    Ultramicroscopy
  • Record number

    2159042