Title of article
Junction depth dependence of breakdown in silicon detector diodes
Author/Authors
Beck، نويسنده , , G.A. and Carter، نويسنده , , A.A. and Carter، نويسنده , , J.R. and Greenwood، نويسنده , , N.M and Lucas، نويسنده , , A.D. and Munday، نويسنده , , D.J. and Pritchard، نويسنده , , T.W. and Robinson، نويسنده , , D. and Wilburn، نويسنده , , C.D. and Wyllie، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
223
To page
226
Abstract
The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1996
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2172544
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