GaAs detector status

Developments in GaAs microstrip and pixel detectors are described and their measured radiation hardness to gamma-ray, neutron, proton and pion doses compared with the performance required at the Large Hadron Collider (LHC). Operation at temperatures as low as −10°C are found to pose no significant problem, the speed of response is satisfactory and the resistance to neutron and gamma-ray irradiation is found to be acceptable. On the other hand, GaAs Schottky diode detectors on semi-insulating substrates are found to be more susceptible than silicon detectors to proton- and pion-induced damage. Detailed studies are now underway to establish whether the latter limitation is intrinsic to the material or related to the detector fabrication technology.