Effect of deep level trapping of free carriers on the stabilization of current-voltage characteristics of high resistivity silicon detectors irradiated by high fluence of neutrons

The observed smooth, good I-V behavior of neutron irradiated p+/n/n+ silicon detectors in the transition region of junction switching side from p+ to n+ (space charge sign inversion from positive to negative) has been explained by a space charge limited current model. This simple model involves deep level trapping induced space charge modification that acts as a “negative feed back” for current injection. The injection current levels predicted by the model for which the feed back would work agree well with those observed in the experiments.