High dynamic range and low power integrated front end design techniques for avalanche photodiode readout

Design techniques of high dynamic range and low power readout integrated circuits, especially in BiCMOS technology, matched to the capacitive impedance source of avalanche photodiodes are presented. More precisely, a BiCMOS integrated linear mode transimpedance amplifier, combining the advantages of both bipolar and CMOS transistors, coupled with a fast gain switching integrated circuit is analysed. In addition, other techniques including discrete solutions and nonlinear amplifiers are reviewed.