Title of article
The effect of impurities on the silicon detectorʹs radiation hardness
Author/Authors
Kuchinski، نويسنده , , P and Petrunin، نويسنده , , A and Savenok، نويسنده , , E and Shumeiko، نويسنده , , N، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
375
To page
378
Abstract
Charged carriers recombination and generation lifetimes as well as DLTS measurements of neutron irradiated silicon detectors have been performed. Radiation-induced changes of the coefficient related to the charge carrier recombination lifetime have been observed to be independent of doping level, type conductivity and original silicon manufacturers. Suggestions about how to avoid the conductivity inversion in n-type silicon detectors at high irradiation levels are also given.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1997
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2175186
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