Title of article
Mobility of excess electrons in hexamethyldisiloxane and bis(trimethylsilyl)methane
Author/Authors
Holroyd، نويسنده , , Richard A. and Itoh، نويسنده , , Kengo and Nishikawa، نويسنده , , Masaru، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
233
To page
236
Abstract
The mobility of excess electrons in bis(trimethylsilyl)methane is 63 cm2/V s, and in hexamethyldisiloxane 22 cm2/V s. For these and related silicon-containing compounds, the mobility is greater than for those alkanes which have comparable free-ion yields.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1997
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2175437
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