Title of article
Energy dependence of damage to Si PIN diodes exposed to β radiation
Author/Authors
Lauber، نويسنده , , Jan A and Gascon-Shotkin، نويسنده , , Susan and Kellogg، نويسنده , , Richard G and Martinez، نويسنده , , German R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
7
From page
165
To page
171
Abstract
The radiation damage to Si PIN diodes such as used in the OPAL SiW luminometer was studied. It was found that the increase in leakage current after exposure to bursts of 500 MeV electrons is >0.2 × 103 times higher than after the exposure of an equivalent dose of electrons emitted from a Strontium β source. Highly-energetic electrons produce a similar amount of damage to silicon as do protons or neutrons.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1997
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2176365
Link To Document