Title of article
Multichannel monolithic front-end system design — 3. High-value resistors in BJT-JFET technology
Author/Authors
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
113
To page
118
Abstract
This work is devoted to circuit design and fabrication technique permitting to form high-value resistors in BJT-JFET technology. The main resistor characteristics are presented. Simple equations are derived to estimate resistor nonlinearity, which take into consideration different process parameters of top and bottom gates semiconductor layers.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1997
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2176683
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