Title of article
Pulse height defect of energetic heavy ions in ion-implanted Si detectors
Author/Authors
Pasquali، نويسنده , , G. and Casini، نويسنده , , Admilton G. and Bini، نويسنده , , M. and Calamai، نويسنده , , S. and Olmi، نويسنده , , A. and Poggi، نويسنده , , G. Francesco Stefanini، نويسنده , , A.A. and Saint-Laurent، نويسنده , , F. and Steckmeyer، نويسنده , , J.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
39
To page
44
Abstract
The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2177342
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