The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

The structure of semiconductor and dielectric thin (100–300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station “Anomalous scattering” of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si3N4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.