Title of article
Reverse current in SI GaAs pixel detectors
Author/Authors
Cola، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
85
To page
91
Abstract
A study of the carrier transport mechanism has been carried out on semi-insulating GaAs X-ray detectors. The aim is to analyze the excess current (larger than thermionic values), breakdown mechanisms and non-uniformities of the electric field in actual devices.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2178196
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