Title of article
Electron injection in semiconductor drift detectors STAR–SVT collaboration
Author/Authors
Bellwied، نويسنده , , R and Beuttenmuller، نويسنده , , R and Chen، نويسنده , , W and DiMassimo، نويسنده , , D and Dou، نويسنده , , L and Dyke، نويسنده , , H and French، نويسنده , , A and Hall، نويسنده , , J.R. and Hoffmann، نويسنده , , G.W. and Humanic، نويسنده , , T and Kotov، نويسنده , , I.V and Kraner، نويسنده , , H.W. and Li، نويسنده , , Z and Lynn، نويسنده , , D and Ott، نويسنده , , G and Pandey، نويسنده , , S.U. and Pruneau، نويسنده , , C and Rykov، نويسنده , , V.L، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
11
From page
70
To page
80
Abstract
We report on the injection of electrons from surface structures of Silicon Drift Detectors into the bulk of the detector for calibration purposes. Also, with these injector structures, detection of magnetic field components perpendicular to the detector’s surface is possible. Implanted line and dot injectors along with MOS injectors are discussed. Studies of lateral uniformity of injection, biasing of injectors to facilitate injection and dot injection are discussed.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2179622
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