Title of article
The double-gate p-JFET-inputted amplifier for low-capacitance detectors
Author/Authors
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
99
To page
104
Abstract
The low-noise monolithic double-gate p-JFET-inputted amplifier for detectors with capacitance up to 30 pF is described.
Keywords
Monolithic , Noise , Charge sensitive amplifier , field effect transistor
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180104
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