Defect analysis of silicon detectors made of different materials for radiation hardness

A comparative study of the radiation hardness of single pad detectors, manufactured from standard float-zone (FZ) and epitaxial (Epi) n-type monocrystal silicon with comparable initial resistivity is presented. Detectors processed from FZ and Epi material with a low (400 Ω cm and 500 Ω cm) and a high (∼2 kΩ cm) initial resistivity have been irradiated up to 4×1014 n/cm2 and measured under the same conditions in order to study the influence of the initial resistivity on the detector radiation hardness.