Modelling of observed double-junction effect

New TCT measurements reveal the existence of a strong electric field, before full depletion, near both p+ and n+ side of high- and medium-resistivity silicon detectors, irradiated over space-charge sign inversion. More, by injecting carriers near the low-field side, double-peaked TCT current pulses are observed. This fact can be justified by assuming the presence of two deep levels in the gap, an acceptor like above mid-gap, and a donor like in the lower half of the gap, which can support the existence of two depleted regions. Particularly, the theoretical analysis of the TCT current profiles has been developed, and the second peak existence has been explained as the effect of carriers re-injection from ENB inside depleted regions.