Title of article
Analysis of trap spectra in LEC and epitaxial GaAs
Author/Authors
Vaitkus، نويسنده , , J. and Gaubas، نويسنده , , E. and Kazukauskas، نويسنده , , V. and Rinkevicius، نويسنده , , V. and Storasta، نويسنده , , J. and Tomasiunas، نويسنده , , R. and Smith، نويسنده , , K.M. and OʹShea، نويسنده , , V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
61
To page
66
Abstract
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high-resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1999
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2182574
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