Title of article
High-voltage performance of silicon detectors irradiated under bias
Author/Authors
Bloch، نويسنده , , Ph. and Ciasnohova، نويسنده , , A. and Jading، نويسنده , , Y. and Peisert، نويسنده , , A. and Golutvin، نويسنده , , I. and Cheremukhin، نويسنده , , A. and Sergueev، نويسنده , , S. and Zamiatin، نويسنده , , N. and Dauphin، نويسنده , , G. and Safieh، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
344
To page
348
Abstract
The CMS preshower detector contains 16 m2 of silicon. The silicon sensors’ design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to α and β particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper.
Keywords
Preshower detector , High-energy particles , Silicon
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2000
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2184388
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