APD arrays and large-area APDs via a new planar process

A fabrication process has been developed which allows the beveled-edge-type of avalanche photodiode (APD) to be made without the need for the artful bevel formation steps. This new process, applicable to both APD arrays and to discrete detectors, greatly simplifies manufacture and should lead to significant cost reduction for such photodetectors. This is achieved through a simple innovation that allows isolation around the device or array pixel to be brought into the plane of the surface of the silicon wafer, hence a planar process. A description of the new process is presented along with performance data for a variety of APD device and array configurations. APD array pixel gains in excess of 10 000 have been measured. Array pixel coincidence timing resolution of less than 5 ns has been demonstrated. An energy resolution of 6% for 662 keV γ-rays using a CsI(T1) scintillator on a planar processed large-area APD has been recorded. Discrete APDs with active areas up to 13 cm2 have been operated.