• Title of article

    Evaluation of novel KEK/HPK n-in-p pixel sensors for ATLAS upgrade with testbeam

  • Author/Authors

    Nagai، نويسنده , , R. and Idلrraga، نويسنده , , J. and Gallrapp، نويسنده , , C. and Unno، نويسنده , , Y. and Lounis، نويسنده , , A. and Jinnouchi، نويسنده , , O. and Takubo، نويسنده , , Y. and Hanagaki، نويسنده , , K. SRID HARA، نويسنده , , K. and Ikegami، نويسنده , , Y. and Kimura، نويسنده , , N. and Nagai، نويسنده , , K. and Nakano، نويسنده , , I. and Takashima، نويسنده , , R. and Terada، نويسنده , , S. and Tojo، نويسنده , , J. and Yorita، نويسنده , , K. and Altenheiner، نويسنده , , S. and Backhaus، نويسنده , , M. and Bomben، نويسنده , , M. and Forshaw، نويسنده , , D. and George، نويسنده , , M. and Janssen، نويسنده , , J. and Jentzsch، نويسنده , , J. and Lapsien، نويسنده , , T. and La Rosa، نويسنده , , A. and Macchiolo، نويسنده , , A. and Marchiori، نويسنده , , G. and Nellist، نويسنده , , John C. and Rubinsky، نويسنده , , I. and Rummler، نويسنده , , A. and Troska، نويسنده , , G. and Weigell، نويسنده , , P. and Weingarten، نويسنده , , J.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    6
  • From page
    78
  • To page
    83
  • Abstract
    A new type of n-in-p planar pixel sensors have been developed at KEK/HPK in order to cope with the maximum particle fluence of 1–3×1016 1 MeV equivalent neutrons per square centimeter ( n eq / cm 2 ) in the upcoming LHC upgrades. Four n-in-p devices were connected by bump-bonding to the new ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 2×1015 n eq / cm 2 . These planar sensors are 150 μ m thick, using biasing structures made out of polysilicon or punch-through dot and isolation structures of common or individual p-stop. Results of measurements with radioactive 90Sr source and with a 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) are presented. The common p-stop isolation structure shows a better performance than the individual p-stop design, after the irradiation. The flat distribution of the collected charge in the depth direction after the irradiation implies that the effect of charge trapping is small, at the fluence, with the bias voltage well above the full depletion voltage.
  • Keywords
    N-in-p , ATLAS , HL-LHC , Pixel detector
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2013
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2193288