Carrier generation in irradiated Si detectors and its impact on the electric field profile

The reverse current of irradiated Si detectors was analyzed in terms of carrier generation via defects with the energy levels in the Si bandgap. The data for detectors irradiated by 23 GeV protons and 1 MeV neutrons were obtained in the temperature (T) range of 200–300 K. Two models of the bulk generation current were developed to allow fitting and simulation of the reverse current vs. T data. These are a model of carrier generation via a single effective energy level for the direct estimation of detector performance, and a model of two generation centers with the effective energy levels originating from radiation-induced deep levels adjacent to the midgap. The influence of the bandgap temperature dependence (Eg(T)) on the parameters of the current generation centers was estimated. The first model gives the effective level energy of Ev+0.65 eV and a linear dependence of the effective defect concentration on fluence. The second model involves contribution from deep donors and deep acceptors positioned at Ev+0.48 eV and Ec−0.52 eV, respectively, and is adapted for simultaneous calculation of the reverse current and the electric field distribution in irradiated detectors. The results of the study show that: (a) both models fit well to the experimental data; (b) contribution of the Eg(T) dependence to Et does not exceed 5%; (c) taking into consideration the bulk generation current gives the correct electric field distribution, which is a key reference for other characteristics of irradiated Si detectors; and (d) the generation lifetime is significantly larger than the carrier trapping time constant pointing to additional levels taking part in trapping of the drifting charge.