Temperature-dependent characterizations of irradiated planar n+-in-n pixel assemblies

Measurements of the leakage current scaling and tuning of front-end electronics due to temperature changes in a range between −30 °C and 0 °C are presented. Assemblies have been irradiated to fluences of 6.8 × 10 15 n eq cm − 2 . A leakage current temperature scaling parameter E g , eff = ( 1.108 ± 0.047 ) eV is found, which is compatible within errors to earlier measurements of non-irradiated or lower irradiated silicon. Secondly, sensitivity of tuning parameters of the employed front-end electronics in terms of threshold and ToT values can be seen. A study of current and charge collection efficiency in an assembly irradiated to a fluence of 2 × 10 16 n eq cm − 2 has been carried out, showing a current related damage factor α I compatible to studies at lower irradiation levels. Charge collection stays constant with consecutively applied annealing steps and front-end electronics shows only slight changes in tuning parameters.