Title of article
Characterisation of semiconductor materials for ionising radiation detectors
Author/Authors
Vaitkus، نويسنده , , J. and Gaubas، نويسنده , , E. and Jasinskaite، نويسنده , , R. and Juska، نويسنده , , G. and Kazukauskas، نويسنده , , V. and Puras، نويسنده , , R. and Rahman، نويسنده , , M. and Sakalauskas، نويسنده , , S. and Smith، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
12
From page
1
To page
12
Abstract
Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different “classical” material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented.
esults of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods.
Keywords
GaAs , SI , Inhomogeneities , Free carrier lifetime , Local electric field , SiC
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196770
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