High resistivity silicon active pixel sensors for recording data from STEM

An X-ray Active Matrix Pixel Sensor (XAMPS) for recording Data from the Scanning Transmission Electron Microscope (STEM) was designed, produced and tested. The reason for measuring scattering angle of all STEM electrons is given together with the requirement on the performance of the XAMPS. Principles of the measurement of the number of STEM electrons scattered in a particular direction are summarized. Results of tests performed on a produced detector are described and the problem with the formation of an insulation layer between silicon and aluminum is identified. A change in the design of the pixel is proposed which results in a fully functioning XAMPS even with the insulation layer present.