• Title of article

    Development of DEPFET Macropixel detectors

  • Author/Authors

    Zhang، نويسنده , , Chen and Lechner، نويسنده , , Peter and Lutz، نويسنده , , Gerhard and Porro، نويسنده , , Matteo and Richter، نويسنده , , Rainer and Treis، نويسنده , , Johannes and Strüder، نويسنده , , Lothar and Nan Zhang، نويسنده , , Shuang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    10
  • From page
    207
  • To page
    216
  • Abstract
    Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1×1 mm2 pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50×50 μm2 to several square millimeters. The measured energy resolution for Mn-Kα peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results.
  • Keywords
    DEPFET , Macropixel , Silicon drift detector , X-ray Astronomy , X-ray spectroscopy
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2006
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2201995