• Title of article

    Sensor simulation and position calibration for the CMS pixel detector

  • Author/Authors

    Chiochia، نويسنده , , V. and Alagِz، نويسنده , , E. and Swartz، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    132
  • To page
    135
  • Abstract
    In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Φ = 5.9 × 10 14 n eq / cm 2 a position resolution below 15 μ m can be achieved after calibration.
  • Keywords
    Electric field , Radiation hardness , Charge collection , Silicon , CMS , pixel
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2006
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2202210