Title of article
Characterization of BJT-based particle detectors
Author/Authors
Piemonte، نويسنده , , C. and Batignani، نويسنده , , G. and Bettarini، نويسنده , , S. and Bondioli، نويسنده , , M. and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Dalla Betta، نويسنده , , G.-F. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M. and Gregori، نويسنده , , P. and Rachevskaia، نويسنده , , I. and Ronchin، نويسنده , , S. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
433
To page
437
Abstract
We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a 109 Cd source excitation.
Keywords
Solid state detectors , Bipolar transistors , Device simulation
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2004
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2202793
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