• Title of article

    Using an active pixel sensor in a vertex detector

  • Author/Authors

    Matis، نويسنده , , Howard S. and Bieser، نويسنده , , Fred and Chen، نويسنده , , Yandong and Gareus، نويسنده , , Robin and Kleinfelder، نويسنده , , Stuart and Oldenburg، نويسنده , , Markus and Retiere، نويسنده , , Fabrice and Georg Ritter، نويسنده , , Hans and Wieman، نويسنده , , Howard H. and Wurzel، نويسنده , , Samuel E. and Yamamoto، نويسنده , , Eugene، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    7
  • From page
    130
  • To page
    136
  • Abstract
    Research has shown that Active Pixel CMOS sensors can detect charged particles. We have been studying whether this process can be used in a collider environment. In particular, we studied the effect of radiation with 55 MeV protons. These results show that a fluence of about 2×1012 protons/cm2 reduces the signal by a factor of two while the noise increases by 25%. A measurement 6 months after exposure shows that the silicon lattice naturally repairs itself. Heating the silicon to 100 °C reduced the shot noise and increased the collected charge. CMOS sensors have a reduced signal-to-noise ratio per pixel because charge diffuses to neighboring pixels. We have constructed a photogate to see if this structure can collect more charge per pixel. Results show that a photogate does collect charge in fewer pixels, but it takes about 15 ms to collect all of the electrons produced by a pulse of light.
  • Keywords
    Photogate , Vertex detector , CMOS , APS , Radiation damage
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2005
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2203950