Facility for simultaneous dual-beam ion implantation

The dual implantation chamber (DIC) at Rossendorf Center for Application of Ion Beams in Materials Research allows materials to be implanted using two ion beams simultaneously. This facility is located at the 45o cross point of two beam lines, one from a single-ended HVEE 500 kV ion implanter and the other from a HVEE 3 MV Tandetron accelerator. Each beam line is equipped with independent ion fluence and current control. The special design of the beam sweeping system, enables both ion beams to scan the target surface simultaneously in synchronous mode, i.e. both ion spots are kept at coincident positions over the target. Experiments, concerning the formation of SiC nanoclusters in Si by high-dose C and simultaneous Si implantation, are reported.