Radiation damage studies of detector-compatible Si JFETs

We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view of adopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed.