• Title of article

    Development of radiation hard edgeless detectors with current terminating structure on p-type silicon

  • Author/Authors

    Verbitskaya، نويسنده , , E. V. Eremin، نويسنده , , V. and Ruggiero، نويسنده , , G.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    10
  • From page
    108
  • To page
    117
  • Abstract
    The development of edgeless Si detectors was stimulated by the tasks of the total pp cross-section study in the TOTEM experiment at the Large Hadron Collider at CERN. For this, the dead region at the detector diced side should be reduced below 50 μm. This requirement is successfully realized in edgeless Si detectors with current terminating structure (CTS), which are now operating at LHC. The development of the experiment and future LHC upgrade need the elaboration of radiation hard version of edgeless Si detectors. The current investigation represents an extension in understanding on edgeless detectors operation and development of a new issue – edgeless detectors with CTS on p-type Si.
  • Keywords
    Silicon detector , Electric field distribution , Radiation hardness , Charge collection
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2011
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2205192