Title of article
Characterization of edgeless detectors fabricated by dry etching process
Author/Authors
Pellegrini، نويسنده , , G. and Campabadal، نويسنده , , F and Lozano، نويسنده , , M and Martي، نويسنده , , S. and Miٌano، نويسنده , , M. and Rafي، نويسنده , , J.M. and Ullلn، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
95
To page
97
Abstract
This work presents results from a new type of edgeless detector, fabricated using an innovative approach to reduce the conventional width of the terminating structure of position sensitive detectors to the detector rim, still using standard planar fabrication technology. A current terminating ring is used to decouple the electrical behaviour of the surface from the sensitive volume within a few tens of micrometres. The detectors, fabricated using a dry etching process to cut the detector as closely as possible to the detector rim, have been illuminated using an infrared laser. The detectors have very high efficiency up to the insensitive area which is located about 25 μm from the detector edge. A detector irradiated with neutrons has also shown good charge collection and lower leakage currents in the current terminating rings compared to non-irradiated ones.
Keywords
Silicon detector , Edgeless detectors , Radiation hardness
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2206075
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