Title of article
Comparison of proton irradiated P-channel and N-channel CCDs
Author/Authors
Gow، نويسنده , , Jason P.D. and Murray، نويسنده , , Neil J. and Holland، نويسنده , , Andrew D. and Burt، نويسنده , , David and Pool، نويسنده , , Peter J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
15
To page
19
Abstract
Charge transfer inefficiency and dark current effects are compared for e2v Technologies plc p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest that the divacancy is the dominant source of thermally generated dark current pre- and post-irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between −70 °C and −110 °C, respectively.
Keywords
CCD , Image sensors , Proton radiation effects , P-channel , CTI , CTE
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2012
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2206197
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