Title of article
Secondary effects on electron multiplication in pure isobutane
Author/Authors
Mangiarotti، نويسنده , , A. and Lima، نويسنده , , I.B. and Vivaldini، نويسنده , , T.C. and Gonçalves، نويسنده , , J.A.C. and Petri، نويسنده , , A.R. and Botelho، نويسنده , , S. and Fonte، نويسنده , , P. and Bueno، نويسنده , , C.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
162
To page
166
Abstract
The presence of secondary processes in electron multiplication under high uniform electric fields at atmospheric pressure in pure isobutane was investigated. The experimental setup consists of a Resistive Plate Chamber-like cell with the anode made of a high resistivity glass ( 2 × 10 12 Ω cm ) and a metallic cathode, on which photoelectrons are produced by the incidence of a pulsed laser beam. In particular, the dependence of the first Townsend coefficient ( α ) on the repetition rate and the intensity of the UV laser pulses was studied. The E / N range considered spanned from ≈ 145 to ≈ 200 Td. The α coefficient was determined by measuring both the primary ionization and the avalanche currents with the help of an electrometer, directly connected to the cathode. Of all the investigated secondary effects, only the ohmic drop across the resistive glass has been found to be non-negligible in the present experimental conditions and has been corrected for. The obtained values are compared with Magboltz simulation results and presented in tabular form.
Keywords
Electron transport parameters , First Townsend coefficient , Isobutane , Ohmic drop , Space charge
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2012
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2206497
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