Title of article
Simulation and experimental study of plasma effects in planar silicon sensors
Author/Authors
Becker، نويسنده , , Julian and Gنrtner، نويسنده , , Klaus and Klanner، نويسنده , , Robert and Richter، نويسنده , , Rainer، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
12
From page
716
To page
727
Abstract
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660 nm laser light to create different densities of electron hole pairs.
Keywords
Simulation , Pulse shape , Silicon sensor , Plasma effect , High charge carrier densities
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2010
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207563
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