Title of article
Electrical analysis of carbon nanostructures/silicon heterojunctions designed for radiation detection
Author/Authors
Tinti، نويسنده , , Giovanni A. and Righetti، نويسنده , , F. and Ligonzo، نويسنده , , M. T. Ganzerli Valentini، نويسنده , , A. and Nappi، نويسنده , , E. and Ambrosio، نويسنده , , A. and Ambrosio، نويسنده , , M. and Aramo، نويسنده , , C. and Maddalena، نويسنده , , P. and Castrucci، نويسنده , , P. and Scarselli، نويسنده , , M. and De Crescenzi، نويسنده , , M. and Fiandrini، نويسنده , , E. and Grossi، نويسنده , , V. and Santucci، نويسنده , , S. D. Pas، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
377
To page
381
Abstract
A new class of radiation detectors based on carbon nanostructures as the active photosensitive element has been recently developed. In this scenario the optimization of the device, both in dark and on light irradiation, is a crucial point. Here, we report on electrical measurements performed in dark conditions on carbon nanofibers and nanotubes deposited on silicon substrates. Our experimental results were interpreted in terms of a multistep tunneling process occurring at the carbon nanostructures/silicon interface.
Keywords
Carbon nanotubes , chemical vapor deposition , photoconductivity , Multistep tunneling , Heterojunctions
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207863
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