Title of article
Electro-optical characterization of SiPM: A comparative study
Author/Authors
Dinu، نويسنده , , Suha N. Abu-Amara، نويسنده , , Z. and Bazin، نويسنده , , C. and Chaumat، نويسنده , , V. and Cheikali، نويسنده , , C. and Guilhem، نويسنده , , G. and Puill، نويسنده , , V. L. Sylvia، نويسنده , , C. and Vagnucci، نويسنده , , J.F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
423
To page
426
Abstract
This work reports on the development of an electro-optical set-up for the characterization of the Silicon PhotoMultiplier (SiPM) devices as well as on the comparative study of the characteristics of different SiPM prototypes. The electrical set-up allows the measurement of the static (breakdown voltage, overvoltage quenching resistance) and dynamic (gain, dark count rate) characteristics. The optical set-up allows the estimation of the photon detection efficiency as a function of the wavelength and the operation voltage. The comparative study has been performed on SiPM devices covering an area of 1×1 mm2 and supplied during 2007 by Photonique S.A. (Switzerland), FBK-irst (Italy), SensL (Ireland) and Hamamatsu (Japan).
Keywords
gain , Photon detection efficiency , Dark count rate , Photodetectors , Silicon PhotoMultiplier
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2009
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2209094
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