Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

In this study, the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current–voltage (I–V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased.