Title of article
The electrical response of PbI2 films to γ-ray irradiation and the limitation of film thickness
Author/Authors
Dmitriev، نويسنده , , Yuri and Bennett، نويسنده , , Paul R. and Cirignano، نويسنده , , Leonard J. and Klugerman، نويسنده , , Mikhail and Shah، نويسنده , , Kanai S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
192
To page
195
Abstract
It was shown that γ-ray induced photocurrent in PbI2 films is determined by the competition of two processes: electron–hole pair generation due to X-ray photon absorption and their recombination on surface defects. As a result of these processes, PbI2 films of (94±4) μm in thickness have maximal charge collection properties. Electron–hole pair creation energy was estimated using the I–t and I–V characteristics of the films. The values obtained with these methods, (8.8±0.5) and (3.4±1.4) eV, respectively, are close to the theoretical prediction.
Keywords
Lead iodide , e–h pairs , Defects , photocurrent , Creation energy
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2009
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2210681
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