Growth and characterization of AuN films through the pulsed arc technique

AuN films were produced through the PAPVD (Plasma Assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer noncommercial system, which consists of a chamber with two faced electrodes, and a power controlled system. In order to obtain the films, an Au Target with 99% purity and stainless steel 304 were used as target and substrate respectively. Nitrogen was injected in gaseous phase at 2.3 mbar pressure, and a discharge of 160 V was performed, supplied by the power controlled source. Au4f and N1s narrow spectra were analyzed using XPS (X-ray Photoelectron Spectroscopy).