Title of article
Nanometric cutting of single crystal silicon surfaces modified by ion implantation
Author/Authors
Fang، نويسنده , , F.Z and Chen، نويسنده , , Y.H. and Zhang، نويسنده , , X.D. and Hu، نويسنده , , X.T and Zhang، نويسنده , , G.X.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
527
To page
530
Abstract
A novel method of ion implantation surface modification for cutting single crystal silicon is proposed. This method modifies the mechanical properties of the materialʹs surface layer, which provides a possibility to reduce surface fractures, prolong tool life and increase the machining efficiency during the cutting process. The mechanism of both implantation surface modification and nanometric cutting is studied using transmission electron microscopy, Raman spectroscopy, nano-indentation and molecular dynamics simulation. Experiments including taper cutting, face turning and aspheric surface generation are conducted to verify the method. The results prove that the method is viable to fabricate complex silicon surface geometry and prolong tool life.
Keywords
Cutting , Silicon , Ion implantation
Journal title
CIRP Annals - Manufacturing Technology
Serial Year
2011
Journal title
CIRP Annals - Manufacturing Technology
Record number
2269345
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